Инд. авторы:	Shikin A.M., Estyunin D.A., Zaitsev N.L., Glazkova D., Klimovskikh I.I., Filnov S.O., Rybkin A.G., Schwier E.F., Kumar S., Kimura A., Mamedov N., Aliev Z., Babanly M.B., Kokh K.A., Tereshchenko O.E., Otrokov M.M., Chulkov E.V., Zvezdin K.A., Zvezdin A.K.
Заглавие:	Sample-dependent Dirac-point gap in MnBi2Te4 and its response to applied surface charge: A combined photoemission and ab initio study
Библ. ссылка:	Shikin A.M., Estyunin D.A., Zaitsev N.L., Glazkova D., Klimovskikh I.I., Filnov S.O., Rybkin A.G., Schwier E.F., Kumar S., Kimura A., Mamedov N., Aliev Z., Babanly M.B., Kokh K.A., Tereshchenko O.E., Otrokov M.M., Chulkov E.V., Zvezdin K.A., Zvezdin A.K. Sample-dependent Dirac-point gap in MnBi2Te4 and its response to applied surface charge: A combined photoemission and ab initio study // Physical Review B. - 2021. - Vol.104. - Iss. 11. - Art.115168. - ISSN 2469-9950. - EISSN 2469-9969.
Идентиф-ры:	DOI: 10.1103/PhysRevB.104.115168; WoS: 000704417000002;
Реферат:	eng: Recently discovered intrinsic antiferromagnetic topological insulator MnBi2Te4 presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimental measurements reported on large DP gaps, a number of recent studies claimed to observe a gapless dispersion of the MnBi2Te4 Dirac cone. Here, using micro(mu)-laser angle-resolved photoemission spectroscopy, we study the electronic structure of 15 different MnBi2Te4 samples, grown by two different chemists groups. Based on the careful energy distribution curves analysis, the DP gaps between 15 and 65 meV are observed, as measured below the Neel temperature at about 10-16 K. At that, roughly half of the studied samples show the DP gap of about 30 meV, while for a quarter of the samples the gaps are in the 50 to 60 meV range. Summarizing the results of both our and other groups, in the currently available MnBi2Te4 samples the DP gap can acquire an arbitrary value between a few and several tens of meV. Furthermore, based on the density functional theory, we discuss a possible factor that might contribute to the reduction of the DP gap size, which is the excess surface charge that can appear due to various defects in surface region. We demonstrate that the DP gap is influenced by the applied surface charge and even can be closed, which can be taken advantage of to tune the MnBi2Te4 DP gap size.
Издано:	2021
Физ. хар-ка:	115168