Инд. авторы:	Ketterl A.S., Andres B., Polverigiani M., Voroshnin V., Gahl C., Kokh K.A., Tereshchenko O.E., Chulkov E.V., Shikin A., Weinelt M.
Заглавие:	Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI
Библ. ссылка:	Ketterl A.S., Andres B., Polverigiani M., Voroshnin V., Gahl C., Kokh K.A., Tereshchenko O.E., Chulkov E.V., Shikin A., Weinelt M. Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI // Physical Review B. - 2021. - Vol.103. - Iss. 8. - Art.085406. - ISSN 2469-9950. - EISSN 2469-9969.
Идентиф-ры:	DOI: 10.1103/PhysRevB.103.085406; РИНЦ: 46758426; WoS: 000614271100003;
Реферат:	eng: Narrow-gap semiconductors with strong spin-orbit coupling such as bismuth tellurohalides have become popular candidates for spintronic applications. But driving spin-polarized photocurrents in these materials with circularly polarized light requires picosecond lifetimes of the photoexcited carriers and low spin-flip scattering rates. In search of these essential ingredients, we conducted an extensive study of the carrier dynamics on the Te-terminated surface of BiTeI, which exhibits a giant Rashba splitting of both surface and bulk states. We observe a complex interplay of surface and bulk dynamics after photoexcitation. Carriers are rapidly rearranged in momentum space by quasielastic phonon and defect scattering, while a phonon bottleneck leads to a slow equilibration between bulk electrons and lattice. The particular band dispersion opens an inelastic decay channel for hot carriers in the form of plasmon excitations, which are immanent to Rashba-split systems. These ultrafast scattering processes effectively redistribute excited carriers in momentum and energy space and thereby inhibit spin-polarized photocurrents.
Издано:	2021
Физ. хар-ка:	085406
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