Инд. авторы:	Sumida K., Ishida Y., Yoshikawa T., Chen J., Nurmamat M., Kokh K.A., Tereshchenko O.E., Shin S., Kimura A.
Заглавие:	Inverted Dirac-electron population for broadband lasing in a thermally activated p-type topological insulator
Библ. ссылка:	Sumida K., Ishida Y., Yoshikawa T., Chen J., Nurmamat M., Kokh K.A., Tereshchenko O.E., Shin S., Kimura A. Inverted Dirac-electron population for broadband lasing in a thermally activated p-type topological insulator // Physical Review B. - 2019. - Vol.99. - Iss. 8. - Art.085302. - ISSN 2469-9950. - EISSN 2469-9969.
Идентиф-ры:	DOI: 10.1103/PhysRevB.99.085302; РИНЦ: 38656679; SCOPUS: 2-s2.0-85061425317; WoS: 000457732300007;
Реферат:	eng: Maintaining a population inversion in electron distributions is the first step towards lasing. There is a strong interest in realizing the inversion in a Dirac conical band structure, because broad-band lasing may then be realized owing to the zero-gap nature of the Dirac cone. Here we show that the population inversion can be elongated to >7 ps at 8 K and >10 ps at 300 K on the surface of a p-type topological insulator (Sb0.73Bi0.27)(2)Te-3. Time- and angle-resolved photoemission spectroscopy gives us the direct evidence for the elongated duration of the inversion in the topological surface states. We hereby provide a guideline to prolong the population inversion at finite temperatures. Our study strengthens the route toward the Dirac materials to be a lasing medium.
Ключевые слова:	DYNAMICS; CRYSTALS; GRAPHENE PHOTONICS;
Издано:	2019
Физ. хар-ка:	085302