Инд. авторы:	Akiyama R., Sumida K., Ichinokura S., Nakanishi R., Kimura A., Kokh K.A., Tereshchenko O.E., Hasegawa S.
Заглавие:	Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1_(x))(2)Te-3
Библ. ссылка:	Akiyama R., Sumida K., Ichinokura S., Nakanishi R., Kimura A., Kokh K.A., Tereshchenko O.E., Hasegawa S. Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1_(x))(2)Te-3 // Journal of Physics: Condensed Matter. - 2018. - Vol.30. - Iss. 26. - Art.265001. - ISSN 0953-8984. - EISSN 1361-648X.
Идентиф-ры:	DOI: 10.1088/1361-648X/aac59b; РИНЦ: 35742491; PubMed: 29770777; SCOPUS: 2-s2.0-85049032658; WoS: 000434445900001;
Реферат:	eng: We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)(2)Te-3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm(2) V-1 s(-1)). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value similar to 17000 cm(2) V-1 s(-1) and the Berry phase of near pi, whereas the SdH oscillations were neither purely two-nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling stale which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.
Ключевые слова:	SB2TE3; CONDUCTION; BI2SE3; SURFACE-STATE; quantum oscillation; Berry phase; (BixSb1-x)(2)Te-3; Shubnikov-de Haas oscillation; topological insulator; electrical transport; BI2TE3;
Издано:	2018
Физ. хар-ка:	265001
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